Browsing by Subject "G11C 2211/5634"

Now showing items 1-2 of 2

    • Error correcting codes for rank modulation 
      Jiang, Anxiao; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-07-17)
      We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the ...
    • Rank modulation for flash memories 
      Jiang, Anxiao; Mateescu, Robert; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-08-14)
      We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The ...